june 2006 rev 1 1/10 10 order codes part number marking package packing STB13007DT4 b13007d d 2 pak tape & reel STB13007DT4 high voltage fast-switching npn power transistor general features improved specification: lower leakage current, tighter gain range, dc current gain preselection, tighter storage time range high voltage capability integrated free-wheeling diode low spread of dynamic parameters minimum lot-to-lot spread for reliable operation very high switching speed fully characterized at 125 c large rbsoa in compliance with the 2002/93/ec european directive description the device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure to enhance switching speeds. applications electronic transformers for halogen lamps switch mode power supplies internal schematic diagram d 2 pak (t0-263) 1 3 www.st.com
STB13007DT4 2/10 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
STB13007DT4 electrical ratings 3/10 1 electrical ratings table 2. thermal data table 1. absolute maximum rating symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 8 a i cm collector peak current (t p < 5ms) 16 a i b base current 4 a i bm base peak current (t p < 5ms) 8 a p tot total dissipation at t c = 25c 80 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case r thj-amb thermal resistance junction-case __ max thermal resistance junction-amb __ max 1.56 62.5 c/w c/w
electrical characteristics STB13007DT4 4/10 2 electrical characteristics (t case = 25c unless otherwise specified) note (1) pulsed duration = 300 s, duty cycle 1.5% table 3. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0v) v ce =700v v ce =700v t c =100c 10 0.5 a ma i ceo collector cut-off current (i b =0) v ce =400v 100 a i ebo emitter cut-off current (i c =0) v eb =9v 100 a v ceo(sus) (1) collector-emitter sustaining voltage (i b = 0) i c =10ma 400 v v ce(sat) (1) collector-emitter saturation voltage i c = 2a _ _ _ i b = 0.4a i c = 5 a __ _ i b = 1a i c = 8 a __ _ i b = 2a i c = 5 a __ _ i b = 1a t c =100c 0.8 1.5 2 3 v v v v v be(sat) (1) base-emitter saturation voltage i c = 2a _ _ _ i b = 0.4a i c = 5a __ _ i b = 1a i c = 5a __ _ i b = 1a t c =100c 1.2 1.6 1.5 v v v h fe dc current gain i c = 2a _ _ v ce = 5v i c = 5a _ v ce = 5v 18 8 40 25 v f diode forward voltage i c = 3a 2.5 v t s t f inductive load storage time fall time i c = 5a ___ v clamp = 250v i b1 = 1a v be(off) = -5v r bb = 0 ? l = 200 h (see fig. 11) 1.7 90 2.3 150 s ns t s t f inductive load storage time fall time i c = 5a ___ v clamp = 250v i b1 = 1a v be(off) = -5v r bb = 0 ? l = 200 h t c =125c (see fig. 11) 2.2 150 s ns
STB13007DT4 electrical characteristics 5/10 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. derating curve figure 3. dc current gain figure 4. dc current gain figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage
electrical characteristics STB13007DT4 6/10 2.2 test circuits figure 11. inductive load switching test circuit figure 7. diode forward voltage figure 8. switching times inductive load figure 9. switching times inductive load figure 10. reverse biased safe operating area 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier
STB13007DT4 package mechanical data 7/10 3 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STB13007DT4 8/10 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STB13007DT4 revision history 9/10 4 revision history table 4. revision history date revision changes 19-jun-2006 1 initial release.
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